列印頁面
產品訊息
製造商WOLFSPEED
製造商產品編號C3M0016120K复制
製造商標準前置時間52 週
訂購代碼3212276
Product RangeC3M
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id115A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0223ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max3.6V
Power Dissipation556W
Operating Temperature Max175°C
Product RangeC3M
SVHCTo Be Advised
產品總覽
C3M0016120K is a C3M™MOSFET technology N-Channel enhancement mode silicon carbide power MOSFET. Application includes solar inverters, EV motor drive, high voltage DC/DC converters, switched mode power supplies, load switch.
- 3rd generation SiC MOSFET technology, optimized package with separate driver source pin
- 0.31inch of creepage distance between drain and source, high blocking voltage with low on-resistance
- High-speed switching with low capacitances, fast intrinsic diode with low reverse recovery (Qrr)
- Reduce switching losses and minimize gate ringing, higher system efficiency
- Reduce cooling requirements, increase power density
- Increase system switching frequency
- 1200V drain - source voltage (VGS = 0V, ID = 100μA)
- 115A continuous drain current (VGS = 15V, TC = 25˚C)
- 16mohm drain-source on-state resistance (VGS = 15V, ID = 75A)
- TO 247-4 package, operating junction and storage temperature range from -40 to +175˚C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
115A
Drain Source On State Resistance
0.0223ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3.6V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
556W
Product Range
C3M
C3M0016120K 的替代選擇
找到 2 個產品
相關產品
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤):.008673

