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CCS050M12CM2
Silicon Carbide MOSFET, 6 Pack, Half Bridge, N Channel, 87 A, 1.2 kV, 0.025 ohm, Module
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| 數量 | 價格 |
|---|---|
| 1+ | NT$17,162.200 |
價格Each
最少: 1
多項: 1
NT$17,162.20
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產品訊息
製造商WOLFSPEED
製造商產品編號CCS050M12CM2
訂購代碼2317992
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id87A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.025ohm
Transistor Case StyleModule
No. of Pins20Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.3V
Power Dissipation337W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Dec-2014)
產品總覽
The CCS050M12CM2 is a 3-phase silicon Carbide Module with zero turn-off tail current, high frequency operation, enables compact and lightweight system, high efficiency operation. Suitable for Z-FET™ MOSFET and Z-Rec™ diode.
- Ultra low loss
- Zero reverse recovery current
- Ease of transistor gate control
- Reduced cooling requirements
- 250A Pulsed drain current
- 150°C Junction temperature
應用
Power Management, Motor Drive & Control, Alternative Energy, Medical
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
87A
Drain Source On State Resistance
0.025ohm
No. of Pins
20Pins
Gate Source Threshold Voltage Max
2.3V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Dec-2014)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
337W
Product Range
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2014)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.329308