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IRG4BC10UDPBF
IGBT, IRG4, 8.5 A, 2.15 V, 38 W, 600 V, TO-220AB, 3 Pins
不再生產
產品總覽
The IRG4BC10UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating up to 80kHz in hard switching, <gt/>200kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
- High efficiency
應用
Lighting, Alternative Energy, Power Management
技術規格
Continuous Collector Current
8.5A
Power Dissipation
38W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.002041