IR2117STRPBF

IR2117STRPBF is a high voltage, high-speed power MOSFET and IGBT driver. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation, fully operational to +600V
• Tolerant to negative transient voltage dV/dt immune, undervoltage lockout
• Gate drive supply range from 10 to 20V
• CMOS Schmitt-triggered inputs with pull-down
• Output in phase with input
• Output high short circuit pulsed current is 200mA min (VO=0V, VIN=Logic “1”, PW ≤ 10µs)
• Output low short circuit pulsed current is 420mA min (VO=15V, VIN=Logic “0”, PW ≤ 10µs)
• Turn-on propagation delay is 125ns typ (VS=0V, VBIAS (VCC, VBS)=15V, CL=1000pF and TA=25°C)
• Turn-off propagation delay is 105ns typ (VS=600V, CL=1000pF and TA=25°C)
• 8 lead SOIC package, ambient temperature range from -40 to 125°C