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SQ3585CEV-T1_GE3
Dual MOSFET, N and P Channel, 20 V, 20 V, 3.57 A, 2.5 A, 0.077 ohm
可供訂購
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| 數量 | 價格 |
|---|---|
| 5+ | NT$4.060 |
| 10+ | NT$2.510 |
| 100+ | NT$1.610 |
| 500+ | NT$1.230 |
| 1000+ | NT$0.933 |
| 5000+ | NT$0.762 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$20.30
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQ3585CEV-T1_GE3复制
訂購代碼4898986
Product RangeTrenchFET Series
技術資料表
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.57A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.077ohm
Drain Source On State Resistance P Channel0.166ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel1.67W
Power Dissipation P Channel1.67W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
技術規格
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.166ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.67W
Product Range
TrenchFET Series
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
3.57A
Drain Source On State Resistance N Channel
0.077ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
1.67W
Operating Temperature Max
175°C
Qualification
AEC-Q101
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005